Title :
A new bipolar transistor—GAT
Author :
Kondo, Hisao ; Yukimoto, Y.
Author_Institution :
Mitsubishi Electric Corporation, Itami, Japan
fDate :
2/1/1980 12:00:00 AM
Abstract :
A new bipolar transistor named Gate Associated Transistor (GAT) was proposed and the operating mechanisms were verified. The structure of the GAT has a unique base region consisting of an FET merged into the base of a standard bipolar transistor. The operating mechanisms and characteristics of the GAT were investigated and compared with those of standard power transistors. The most outstanding feature of the GAT was a large area for safe operation.
Keywords :
Bipolar transistors; Breakdown voltage; Conductivity; Electric resistance; FETs; MOSFET circuits; Power transistors; Pulse modulation; Space vector pulse width modulation; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.19870
