Insulated-gate planar thyristors: II—Quantitative modeling

The basic modes of operation of a new planar, high-voltage thyristor which is controlled by an insulated gate are described in Part I. This paper presents models for the dc operation of the device. Low-current nonregenerative operation is described by an equivalent circuit containing MOSFET´s, bipolar transistors, and resistors. These are analyzed by a general-purpose nonlinear circuit analysis program. Sophisticated transistor models, both bipolar and MOS, are required to accurately represent the component devices, and their characteristics are discussed. The high-conductivity state is modeled as a one-dimensional p-i-n diode. Determination of appropriate parameters is described and simulations are compared to measured characteristics. The resulting models are suitable for the design of devices with a wide variety of dc characteristics.