• DocumentCode
    1067723
  • Title

    Computer analysis of breakdown mechanism in planar power MOSFET´s

  • Author

    Ochi, Shikayuki ; Okabe, Takeaki ; Yoshida, Isao ; Yamaguchi, Ken ; Nagata, Minoru

  • Author_Institution
    Hitachi Ltd., Kokubunji, Tokyo, Japan
  • Volume
    27
  • Issue
    2
  • fYear
    1980
  • fDate
    2/1/1980 12:00:00 AM
  • Firstpage
    399
  • Lastpage
    400
  • Abstract
    Breakdown mechanism in planar power MOSFET´s having high breakdown voltage is investigated. Precise electric field distribution is obtained by two-dimensional numerical analysis. This field distribution is used to optimize device structure and to predict breakdown voltage. A technique for reducing the electric field on the silicon surface by equalizing its distribution is presented.
  • Keywords
    Avalanche breakdown; Electric breakdown; Impurities; MOSFET circuits; Numerical analysis; Power MOSFET; Rain; Silicon; Surface resistance; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1980.19874
  • Filename
    1480667
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1067723