DocumentCode :
1067753
Title :
Low frequency noise in p+-GaAs with non-alloyed contacts
Author :
Chen, Xiao Yuan ; Leys, M.R. ; Ragay, F.W.
Author_Institution :
Dept. of Electr. Eng., Eindhoven Univ. of Technol.
Volume :
30
Issue :
7
fYear :
1994
fDate :
3/31/1994 12:00:00 AM
Firstpage :
600
Lastpage :
601
Abstract :
Measurements of 1/f noise were performed including and excluding the influence of the contacts formed by metallic aluminum layers (MBE) deposited on the p+-type GaAs (MBE). The results show that the MBE process can produce non-alloyed ohmic contacts free of noise. The 1/f noise of bulk p+-GaAs is characterised by αlatt≃5×10-4
Keywords :
gallium arsenide; metallisation; molecular beam epitaxial growth; ohmic contacts; random noise; semiconductor technology; 1/f noise measurements; GaAs; MBE deposited; low frequency noise; metallic aluminum layers; nonalloyed contacts; nonalloyed ohmic contacts; p+-GaAs;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19940379
Filename :
280625
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1067753
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