Title :
Low temperature silicon nitride deposition by direct photolysis using high power krypton flash lamps
Author :
Dulac, O. ; Nissim, Y.I.
Author_Institution :
JIPELEC SA, Grenoble
fDate :
3/31/1994 12:00:00 AM
Abstract :
Silicon nitride films have been deposited on InP using a photochemical process. A high power krypton flash lamp was used to produce the direct photolysis of conventional reactive gases with the highest deposition rates ever reported in UVCVD (93 Å/min). Also, the high UV fluence allows a cold process and results in films with excellent structural and electrical properties
Keywords :
CVD coatings; chemical vapour deposition; flash lamps; photolysis; silicon compounds; InP; Kr; Si3N4; Si3N4 CVD deposited films; UVCVD; cold process; direct photolysis; electrical properties; high UV fluence; high power krypton flash lamps; highest deposition rates; low temperature silicon nitride deposition; photochemical process; reactive gases; structural properties;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940409
