DocumentCode :
1067786
Title :
Potentially high-performance carbon-doped GaInP/GaAs heterojunction bipolar transistors with different compositional base gradings
Author :
Song, Jong-In ; Caneau, Catherine ; Hong, Woo-Pyo
Author_Institution :
Bellcore, Red Bank, NJ
Volume :
30
Issue :
7
fYear :
1994
fDate :
3/31/1994 12:00:00 AM
Firstpage :
605
Lastpage :
606
Abstract :
The characteristics of carbon-doped GaInP/GaAs heterojunction bipolar transistors (HBTs) with a compositionally-graded base are reported. The characteristics of HBTs with three different linearly-graded AlxGa1-xAs bases (x=0→0.1, 0→0.2, 0→0.3) are compared with those of an HBT without base grading. Nearly ideal transistor characteristics were observed for x values up to 0.2, indicating possible high-speed operation of graded base GaInP/GaAs HBTs
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; C-doped GaInP/GaAs heterojunction bipolar transistors; GaInP-GaAs; compositional base gradings; compositionally-graded base; graded base GaInP/GaAs HBTs; high-performance; high-speed operation; ideal transistor characteristics; linearly-graded AlxGa1-xAs bases;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19940386
Filename :
280628
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1067786
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