• DocumentCode
    1067786
  • Title

    Potentially high-performance carbon-doped GaInP/GaAs heterojunction bipolar transistors with different compositional base gradings

  • Author

    Song, Jong-In ; Caneau, Catherine ; Hong, Woo-Pyo

  • Author_Institution
    Bellcore, Red Bank, NJ
  • Volume
    30
  • Issue
    7
  • fYear
    1994
  • fDate
    3/31/1994 12:00:00 AM
  • Firstpage
    605
  • Lastpage
    606
  • Abstract
    The characteristics of carbon-doped GaInP/GaAs heterojunction bipolar transistors (HBTs) with a compositionally-graded base are reported. The characteristics of HBTs with three different linearly-graded AlxGa1-xAs bases (x=0→0.1, 0→0.2, 0→0.3) are compared with those of an HBT without base grading. Nearly ideal transistor characteristics were observed for x values up to 0.2, indicating possible high-speed operation of graded base GaInP/GaAs HBTs
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; C-doped GaInP/GaAs heterojunction bipolar transistors; GaInP-GaAs; compositional base gradings; compositionally-graded base; graded base GaInP/GaAs HBTs; high-performance; high-speed operation; ideal transistor characteristics; linearly-graded AlxGa1-xAs bases;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940386
  • Filename
    280628
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1067786