DocumentCode
1067795
Title
An X-band SOS resistive gate—insulator—semiconductor (RIS) switch
Author
Kwok, Siang Ping
Author_Institution
Hughes Torrance Research Center, Torrance, CA
Volume
27
Issue
2
fYear
1980
fDate
2/1/1980 12:00:00 AM
Firstpage
442
Lastpage
448
Abstract
The new X-Band Resistive Gate-Insulator-Semiconductor (RIS) switch has been fabricated on silicon-on-sapphire, and its equivalent circuit model characterized. An RIS SPST switch with 20-dB ON/OFF isolation, 1.2-dB insertion loss, and power-handling capacity in excess of 20-W peak has been achieved at X band. The device switching time is on the order of 600 ns, and it requires negligible control holding current in both ON and OFF states. The device is compatible with monolithic integrated-circuit technology and thus is suitable for integration into low-cost monolithic phase shifters or other microwave integrated circuits.
Keywords
Equivalent circuits; Insertion loss; Integrated circuit technology; Isolation technology; Microwave devices; Microwave integrated circuits; Microwave technology; Phase shifters; Switches; Switching circuits;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1980.19881
Filename
1480674
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