Title :
Rapid photo-deposition of silicon dioxide films using 172 nm VUV light
Author :
Bergonzo, P. ; Boyd, I.W.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London
fDate :
3/31/1994 12:00:00 AM
Abstract :
A new method is presented for the rapid direct photo-deposition of silicon dioxide using silane and oxygen mixtures and 172 nm radiation generated from a xenon excimer lamp. The growth rates obtained reach 500 Å/min at 300°C, some 200% faster than previously achieved using either low temperature CVD or traditional optical sources
Keywords :
chemical vapour deposition; silicon compounds; 172 nm; 300 C; CVD deposition; SiO2; VUV light; direct photo-deposition; growth rates; low temperature CVD; optical sources; oxygen mixtures; rapid photo-deposition; silane; xenon excimer lamp;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940412
