DocumentCode :
1067872
Title :
The charge-handling capacity of buried-channel structures under hot-electron conditions
Author :
Hess, Karl ; Shichijo, Hisashi
Author_Institution :
University of Illinois at Urbana-Champaign, Urbana, IL, USA
Volume :
27
Issue :
2
fYear :
1980
fDate :
2/1/1980 12:00:00 AM
Firstpage :
503
Lastpage :
504
Abstract :
Hot-electron effects have been included in calculations of the charge-handling capacity of buffed-channel MOS structures. The calculation shows that the charge-handling capacity is drastically reduced by high electric fields parallel to the interface. For an electric field of 1.5-5 × 104V/cm the maximum charge capacity decreases by at least a factor of 2.
Keywords :
Charge carriers; Charge coupled devices; Distribution functions; Electron traps; Heating; Interface states; Potential well; Scattering; Silicon; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1980.19889
Filename :
1480682
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1067872
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