Title :
Improved Low-Voltage-Triggered SCR Structure for RF-ESD Protection
Author :
Fei Ma ; Yan Han ; Shurong Dong ; Meng Miao ; Hailiang Liang
Author_Institution :
Inst. of Microelectron. & Optoelectron., Zhejiang Univ., Hangzhou, China
Abstract :
An improved low-voltage-triggered silicon-controlled rectifier is proposed for on-chip electrostatic discharge (ESD) protection in a 65-nm radio frequency CMOS. The experimental results show that it has a very low intrinsic capacitance of 18 fF at zero bias, a low and tunable trigger voltage in the range of 2.2-4.5 V, a low leakage current of 0.3 nA, and a low overshoot voltage under very fast ESD pulse. It achieves a 1.9-A failure current with only 50×9-μm2 layout area.
Keywords :
CMOS integrated circuits; electrostatic discharge; leakage currents; radiofrequency integrated circuits; rectifiers; silicon; RF-ESD protection; SCR structure; Si; current 0.3 nA; current 1.9 A; electrostatic discharge; leakage current; radiofrequency CMOS; silicon controlled rectifier; size 65 nm; voltage 2.2 V to 4.5 V; CMOS integrated circuits; Electrostatic discharges; Leakage currents; Rectifiers; Thyristors; Electrostatic discharge (ESD) protection; radio frequency (RF); silicon-controlled rectifier (SCR); trigger voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2265411
