DocumentCode
1068037
Title
High gain operational amplifier implemented in 0.5 μm GaAs E/D HEMT technology
Author
Feng, Songhe ; Seitzer, D.
Author_Institution
Fraunhofer-Inst. for Integrated Circuits, Erlangen
Volume
30
Issue
8
fYear
1994
fDate
4/14/1994 12:00:00 AM
Firstpage
636
Lastpage
637
Abstract
A high voltage gain operational amplifier implemented in 0.5 μm GaAs E/D HEMT technology is presented. The amplifier principally consists of a differential input stage and a high gain cascode stage which was developed by Toumazou and Haigh (1990). On-wafer measurement verifies that the amplifier achieves an open-loop voltage gain of 73 dB and a unity-gain bandwidth of 1.78 GHz
Keywords
III-V semiconductors; differential amplifiers; field effect integrated circuits; gallium arsenide; linear integrated circuits; operational amplifiers; 0.5 mum; 1.78 GHz; 73 dB; GaAs; GaAs E/D HEMT technology; common mode rejection ratio; differential input stage; frequency response; high gain cascode stage; high voltage gain operational amplifier; on-wafer measurement; open-loop voltage gain; unity-gain bandwidth;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940467
Filename
280653
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