DocumentCode :
1068054
Title :
An equivalent circuit for charge-transfer devices
Author :
Gokhale, B.V.
Author_Institution :
IBM Corporation, East Fishkill Facility, Hopewell Junction, NY
Volume :
27
Issue :
3
fYear :
1980
fDate :
3/1/1980 12:00:00 AM
Firstpage :
604
Lastpage :
606
Abstract :
A new equivalent circuit for charge-transfer devices (CTD) is proposed. Results of circuit simulations of a string of CTD´s, using the transient analysis program ASTAP, are presented. These show, among other details, incomplete transfer caused by high pulse repetition rates and backward transfer caused by excessive input charge.
Keywords :
Capacitors; Charge coupled devices; Circuit simulation; Electrons; Equivalent circuits; Poisson equations; Silicon; Substrates; Transient analysis; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1980.19907
Filename :
1480700
Link To Document :
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