Title :
High-power, high-temperature InGaAs-AlGaAs strained-layer quantum-well diode lasers
Author :
Wang, Christine A. ; Choi, H.K. ; Walpole, J.N. ; Evans, G.A. ; Reichert, W.F. ; Chow, W.W. ; Fuller, C.T.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA
fDate :
4/14/1994 12:00:00 AM
Abstract :
Output power of 2.26 W and maximum power conversion efficiency of 57% were obtained for InGaAs-AlGaAs strained-layer quantum-well lasers (25°C, λ≃1 μm). Output powers were 2.35 W (-55°C) and 1.79 W (75°C) with maximum power efficiencies of 51% (-55°C) and 46% (75°C)
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; semiconductor lasers; -55 to 75 C; 1 mum; 1.79 to 2.35 W; 46 to 57 percent; InGaAs-AlGaAs; InGaAs-AlGaAs strained-layer quantum-well diode lasers; high-temperature laser; maximum power conversion efficiency; output power;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940462
