• DocumentCode
    1068272
  • Title

    Modeling of chemical-mechanical polishing: a review

  • Author

    Nanz, Gerd ; Camilletti, Lawrence E.

  • Author_Institution
    Digital Equip. Corp., Vienna, Austria
  • Volume
    8
  • Issue
    4
  • fYear
    1995
  • fDate
    11/1/1995 12:00:00 AM
  • Firstpage
    382
  • Lastpage
    389
  • Abstract
    This paper gives a survey of the status of today´s modeling of chemical-mechanical polishing (CMP). Most existing models describe specific aspects of CMP, such as the flow of the slurry or the bending of the polishing pad. However, as yet no model describes the entire available process. This paper critically reviews existing models with respect to generality, in particular, the different assumptions of the models are investigated. Furthermore, the models are compared and the controversial treatment of physical effects is discussed
  • Keywords
    polishing; reviews; semiconductor process modelling; chemical-mechanical polishing; modeling; pad bending; review; slurry flow; Abrasives; Chemical lasers; Lithography; Logic devices; Packaging; Planarization; Semiconductor device modeling; Silicon compounds; Slurries; Thermal force;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/66.475179
  • Filename
    475179