DocumentCode
1068272
Title
Modeling of chemical-mechanical polishing: a review
Author
Nanz, Gerd ; Camilletti, Lawrence E.
Author_Institution
Digital Equip. Corp., Vienna, Austria
Volume
8
Issue
4
fYear
1995
fDate
11/1/1995 12:00:00 AM
Firstpage
382
Lastpage
389
Abstract
This paper gives a survey of the status of today´s modeling of chemical-mechanical polishing (CMP). Most existing models describe specific aspects of CMP, such as the flow of the slurry or the bending of the polishing pad. However, as yet no model describes the entire available process. This paper critically reviews existing models with respect to generality, in particular, the different assumptions of the models are investigated. Furthermore, the models are compared and the controversial treatment of physical effects is discussed
Keywords
polishing; reviews; semiconductor process modelling; chemical-mechanical polishing; modeling; pad bending; review; slurry flow; Abrasives; Chemical lasers; Lithography; Logic devices; Packaging; Planarization; Semiconductor device modeling; Silicon compounds; Slurries; Thermal force;
fLanguage
English
Journal_Title
Semiconductor Manufacturing, IEEE Transactions on
Publisher
ieee
ISSN
0894-6507
Type
jour
DOI
10.1109/66.475179
Filename
475179
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