• DocumentCode
    1068279
  • Title

    Realisation of doped-channel MISFETs with high breakdown voltage in AlGaAs/InGaAs based material system

  • Author

    Kaviani, K. ; Madhukar, A. ; Brown, J.J. ; Larson, Lawrence E.

  • Author_Institution
    Univ. of Southern California, Los Angeles, CA
  • Volume
    30
  • Issue
    8
  • fYear
    1994
  • fDate
    4/14/1994 12:00:00 AM
  • Firstpage
    669
  • Lastpage
    670
  • Abstract
    The authors report the realisation of a doped-channel MISFET with high drain-source and gate-drain breakdown voltages of 41 and -37 V, respectively, and a record low output conductance of 150 μS/mm. These characteristics are achieved through the use of n-type highly doped In 0.26Ga0.74As as the channel material and a short period (AlAs)3(GaAs)4 superlattice as the gate insulator and the lower barrier grown on GaAs (100) substrates
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; insulated gate field effect transistors; semiconductor superlattices; (AlAs)3(GaAs)4 superlattice; 37 V; 41 V; AlAsGaAs; AlGaAs-InGaAs; AlGaAs/InGaAs based material system; GaAs; GaAs (100) substrates; In0.26Ga0.74As; channel material; doped-channel MISFETs; gate insulator; gate-drain breakdown voltages; high breakdown voltage; high drain-source; low output conductance; lower barrier; n-type; short period;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940444
  • Filename
    280675
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1068279