Quasi-three-dimensional modeling of sub-micron LOCOS structures

Author

Park, Hwasik ; Smeys, Peter ; Sahul, Zakir H. ; Saraswat, Krishna C. ; Dutton, Robert W. ; Hojung Hwang

Author_Institution

Dept. of Electr. Eng., Stanford Univ., CA, USA

Volume

8

Issue

4

fYear

1995

fDate

11/1/1995 12:00:00 AM

Firstpage

390

Lastpage

401

Abstract

A quasi-three-dimensional simulation of local oxidation is presented. The approach employs the solution of three-dimensional oxidant diffusion, a set of analytical solutions which can predict two-dimensional local oxidation of silicon (LOCOS) shape and parameterization to consider the three-dimensional oxidation enhancement effects. A synthesis step is used to combine the three-dimensional oxidant profile and two-dimensional analytical solutions for the creation of full three-dimensional LOCOS shapes. Oxidation characteristics are investigated based on atomic force microscopy (AFM) measurements that produce three-dimensional structural effects such as the bird´s eye phenomena. The narrow window and narrow mask effects on the bird´s beak length are simulated and compared with SEM photographs obtained using AFM measurements. Differences between two- and three-dimensional oxidation effects are shown by the comparison of simulation and experiments

Keywords

atomic force microscopy; oxidation; scanning electron microscopy; semiconductor process modelling; silicon; SEM; Si; atomic force microscopy; bird´s beak; bird´s eye; local oxidation; oxidant diffusion; quasi-three-dimensional modeling; simulation; sub-micron LOCOS structures; Atomic force microscopy; Atomic measurements; Elasticity; Force measurement; Length measurement; Oxidation; Scanning electron microscopy; Shape; Silicon; Viscosity;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/66.475180

Filename

475180