DocumentCode :
1068290
Title :
Spray-deposited ITO—Silicon SIS heterojunction solar cells
Author :
Ashok, S. ; Sharma, Panduranga P. ; Fonash, Stephen J.
Author_Institution :
Pennsylvania State University, University Park, PA
Volume :
27
Issue :
4
fYear :
1980
fDate :
4/1/1980 12:00:00 AM
Firstpage :
725
Lastpage :
730
Abstract :
A systematic study of semiconductor-insulator-semiconductor (SIS) solar cells has been undertaken on n-type silicon using spray-deposited indium-tin-oxide (ITO) for the window layer of the heterostructure. The optical and electrical characteristics of the ITO layer as well as the thickness of the I layer have been optimized to yield the following photovoltaic parameters on 0.5-Ω . cm n-Si: 
V, 
mA/cm2(adjusted for Ag grid area), 
, and illuminated area η = 11.5 percent. The dark 
and 
characteristics have also been evaluated to identify the mechanisms of barrier formation and current flow.
V, mA/cm2(adjusted for Ag grid area), , and illuminated area η = 11.5 percent. The dark and characteristics have also been evaluated to identify the mechanisms of barrier formation and current flow.Keywords :
Amorphous materials; Chemicals; Conductors; Heterojunctions; Optical device fabrication; Photovoltaic cells; Photovoltaic systems; Silicon; Solar power generation; Spraying;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1980.19928
Filename :
1480721
Link To Document :
