Title :
GaAs-AlxGa1-xAs integrated twin-guide lasers with distributed Bragg reflectors
Author :
Kawanishi, H. ; Suematsu, Y. ; Kishino, M.
Author_Institution :
Department of Physical Electronics, Tokyo Institute of Technology
fDate :
2/1/1977 12:00:00 AM
Abstract :
A GaAs-AlxGa1-xAs integrated twin-guide (ITG) laser with distributed Bragg reflectors (DBR) was fabricated. The DBR was in the form of a third-order grating which was chemically etched on the surface of the output waveguide. The ITG lasers with distributed Bragg reflectors (DBR-ITG lasers) operating at room temperature showed single mode oscillation up to 1.5 times the threshold current and the half-side external quantum efficiency was 1 ∼ 2 percent.
Keywords :
Chemical lasers; Distributed Bragg reflectors; Gallium arsenide; Gratings; Laser modes; Optical coupling; Optical resonators; Optical waveguides; Surface waves; Waveguide lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1977.1069270
