DocumentCode
1068332
Title
Rigorous three-dimensional time-domain finite-difference electromagnetic simulation for photolithographic applications
Author
Wong, Alfred K. ; Neureuther, Andrew R.
Author_Institution
Interuniversitair Microelectron. Center, Leuven, Belgium
Volume
8
Issue
4
fYear
1995
fDate
11/1/1995 12:00:00 AM
Firstpage
419
Lastpage
431
Abstract
The parallel electromagnetic simulation program TEMPEST has been generalized to analyze three-dimensional problems in photolithography. TEMPEST, which has been made available on the National Center for Supercomputing Applications, combines together techniques for rigorous simulation of electromagnetic scattering and diffraction, a novel and efficient absorbing boundary condition, and synthesis of partially coherent images including the effects of optical system aberrations. The electromagnetic solution is based on the time-domain finite difference method, but exploits the power of parallel computer architectures. Equations suitable for parallel implementation are given. Simulation time is fifteen to twenty minutes with 64 M simulation nodes on a CM-5 with 512 nodes and 16 GBytes of memory. The usefulness and effectiveness of the program for photolithographic applications are demonstrated by considering problems in projection printing of polarization and transmission effects in contact holes, and reflective notching which causes undesired exposure in photoresists
Keywords
aberrations; digital simulation; finite difference time-domain analysis; light diffraction; light scattering; parallel processing; photolithography; semiconductor process modelling; TEMPEST; absorbing boundary condition; contact holes; electromagnetic diffraction; electromagnetic scattering; electromagnetic simulation; optical system aberrations; parallel computer architectures; partially coherent images; photolithographic applications; polarization effects; projection printing; reflective notching; simulation nodes; three-dimensional problems; time-domain finite-difference simulation; transmission effects; Analytical models; Application software; Computational modeling; Electromagnetic analysis; Electromagnetic diffraction; Electromagnetic scattering; Finite difference methods; Lithography; Optical diffraction; Time domain analysis;
fLanguage
English
Journal_Title
Semiconductor Manufacturing, IEEE Transactions on
Publisher
ieee
ISSN
0894-6507
Type
jour
DOI
10.1109/66.475184
Filename
475184
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