• DocumentCode
    1068363
  • Title

    A manufacturable process to improve thermal stability of 0.25-μm cobalt silicided poly gate

  • Author

    Wang, Qingfeng ; Lauwers, Anne ; Deweerdt, Bruno ; Verbeeck, Rita ; Loosen, Freddy ; Maex, Karen

  • Author_Institution
    IMEC, Leuven, Belgium
  • Volume
    8
  • Issue
    4
  • fYear
    1995
  • fDate
    11/1/1995 12:00:00 AM
  • Firstpage
    449
  • Lastpage
    451
  • Abstract
    A CoSi2 salicidation process using a thin titanium capping layer is developed to improve the thermal stability of deep submicron CoSi2/poly stacks. 50 nm CoSi2 was uniformly formed on 0.25-μm wide poly lines. The electrical results show that the lines formed by a capping process using Ti can withstand higher thermal treatment (750° C for 30 min) without significant degradation. This work shows that the modified CoSi2 process should be considered for 0.25-μm CMOS applications
  • Keywords
    CMOS integrated circuits; ULSI; circuit stability; cobalt compounds; integrated circuit metallisation; 0.25 micron; 30 min; 50 nm; 750 degC; CMOS applications; CoSi2; capping layer; deep submicron stacks; manufacturable process; salicidation process; thermal stability; thermal treatment; CMOS process; Cobalt; Conductivity; Electric variables measurement; Furnaces; Manufacturing processes; Silicidation; Silicides; Thermal stability; Titanium;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/66.475188
  • Filename
    475188
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1068363