• DocumentCode
    1068383
  • Title

    A study of the factors which control the efficiency of ion-implanted silicon solar cells

  • Author

    Douglas, Edward C. ; D´Aiello, Robart V.

  • Author_Institution
    David Sarnoff Research Center, Princeton, NJ
  • Volume
    27
  • Issue
    4
  • fYear
    1980
  • fDate
    4/1/1980 12:00:00 AM
  • Firstpage
    792
  • Lastpage
    802
  • Abstract
    The objective of this work was to determine experimentally the ion-implantation parameters and furnace annealing conditions required to produce high-efficiency solar cells. A comprehensive experimental study was conducted in which the optimum ion-implantation parameters were found by a systematic variation of the implant parameters (i.e., dose, energy, species) followed by detailed studies of solar-cell devices. Two furnace heat-treatment techniques were found which effectively anneal the implanted layers and at the same time preserve or improve the diffusion length in the bulk silicon. Detailed characteristics of both the junction and bulk properties of solar cells fabricated over the spectrum of implant parameters will be discussed. As a result of this study, optimized implant parameters and annealing conditions were found which allow for the fabrication of 14-15- percent (AM1) efficient solar cells.
  • Keywords
    Ambient intelligence; Annealing; Degradation; Fabrication; Furnaces; Implants; Lattices; Photovoltaic cells; Silicon; Virtual manufacturing;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1980.19938
  • Filename
    1480731