DocumentCode :
1068559
Title :
UMOS transistors on
Author :
Ammar, Elie S. ; Rodgers, T.J. ; Rodgers, T.J.
Author_Institution :
Stanford University, Stanford, CA
Volume :
27
Issue :
5
fYear :
1980
fDate :
5/1/1980 12:00:00 AM
Firstpage :
907
Lastpage :
914
Abstract :
When common V-groove etching techniques are applied to
Keywords :
Anisotropic magnetoresistance; Capacitance; Circuits; Epitaxial layers; Etching; Fabrication; Helium; Large scale integration; Scalability; Silicon;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1980.19955
Filename :
1480748
Link To Document :
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