DocumentCode
1068617
Title
Relation between incremental intrinsic capacitances and transconductances in MOS transistors
Author
Tsividis, Yannis P.
Author_Institution
Columbia University, New York, NY, USA
Volume
27
Issue
5
fYear
1980
fDate
5/1/1980 12:00:00 AM
Firstpage
946
Lastpage
948
Abstract
The ratio of intrinsic substrate and gate capacitances is related to the ratio of substrate transconductance to gate transconductance for a long-channel MOS transistor in strong inversion. It is shown that under certain assumptions the two ratios are approximately equal.
Keywords
Capacitance; Computational efficiency; Computer simulation; Digital circuits; Electronic circuits; MOSFETs; Transconductance; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1980.19961
Filename
1480754
Link To Document