A fully differential CMOS transconductance-transimpedance wideband amplifier

Author

Wang, Chomg-kuang ; Huang, Po-Chiun ; Huang, Chen-Yi

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan

Volume

42

Issue

11

fYear

1995

fDate

11/1/1995 12:00:00 AM

Firstpage

745

Lastpage

748

Abstract

A high-speed wideband amplifier using a transconductance-transimpedance circuit technique is presented. The proposed circuit configuration results in more reliable performances than are typically obtained from designs using conventional pole-zero, cancellation or peaking technique. With a 0.8 μm, double poly, double metal, n-well CMOS technology and single 5-V power supply, the prelayout simulation of this amplifier shows a -3 dB frequency of 300 MHz with a voltage gain of 14 dB when the loading capacitance is 1.5 pF

Keywords

CMOS analogue integrated circuits; SONET; automatic gain control; differential amplifiers; integrated circuit design; integrated circuit reliability; optical communication equipment; wideband amplifiers; 0.8 mum; 1.5 pF; 14 dB; 300 MHz; 5 V; CMOS transconductance-transimpedance wideband amplifier; SONET OC-3 AGC circuits; differential amplifier; double poly double metal n-well CMOS technology; high-speed wideband amplifier; loading capacitance; prelayout simulation; reliable performance; voltage gain; Broadband amplifiers; CMOS technology; Capacitance; Circuit simulation; Frequency; Gain; Power amplifiers; Power supplies; Voltage; Wideband;

fLanguage

English

Journal_Title

Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on

Publisher

ieee

ISSN

1057-7130

Type

jour

DOI

10.1109/82.475257

Filename

475257