Title :
Application of laser processing for improved oxides grown from polysilicon
Author :
Yaron, Giora ; Hess, LaVerne D. ; Kokorowski, S.A. ; Kokorowski, Stanislaw A.
Author_Institution :
National Semiconductor, Santa Clara, CA, USA
fDate :
5/1/1980 12:00:00 AM
Abstract :
Laser annealing techniques were successfully incorporated into standard MOS processing to improve the quality of oxides grown over polysilicon. Polysilicon films (5000 Å thick) deposited over 1000-Å SiO2, grown over
Keywords :
Annealing; Circuits; Laser applications; Laser theory; Leakage current; MOS capacitors; Pulsed laser deposition; Semiconductor films; Silicon; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.19965
