• DocumentCode
    1068662
  • Title

    Application of laser processing for improved oxides grown from polysilicon

  • Author

    Yaron, Giora ; Hess, LaVerne D. ; Kokorowski, S.A. ; Kokorowski, Stanislaw A.

  • Author_Institution
    National Semiconductor, Santa Clara, CA, USA
  • Volume
    27
  • Issue
    5
  • fYear
    1980
  • fDate
    5/1/1980 12:00:00 AM
  • Firstpage
    964
  • Lastpage
    969
  • Abstract
    Laser annealing techniques were successfully incorporated into standard MOS processing to improve the quality of oxides grown over polysilicon. Polysilicon films (5000 Å thick) deposited over 1000-Å SiO2, grown over
  • Keywords
    Annealing; Circuits; Laser applications; Laser theory; Leakage current; MOS capacitors; Pulsed laser deposition; Semiconductor films; Silicon; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1980.19965
  • Filename
    1480758
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1068662