DocumentCode :
1068707
Title :
Diffusion profiling using the graded C(V) method
Author :
Shappir, J. ; Kolodny, A. ; Shacham-Diamand, Y.
Author_Institution :
Hebrew University, Jerusalem, Israel
Volume :
27
Issue :
5
fYear :
1980
fDate :
5/1/1980 12:00:00 AM
Firstpage :
993
Lastpage :
995
Abstract :
A simple and quick technique for determination of impurity-diffusion profiles in semiconductors from MOS 
measurements on a gradually etched surface is presented and analyzed, This technique is most useful for slowly varying profiles in the range of 1016-5 × 1018cm-3. Experimental profiles are given for P in Si, and for Cd in InSb.
measurements on a gradually etched surface is presented and analyzed, This technique is most useful for slowly varying profiles in the range of 1016-5 × 1018cm-3. Experimental profiles are given for P in Si, and for Cd in InSb.Keywords :
Area measurement; Capacitance measurement; Dielectric measurements; Dielectrics and electrical insulation; Etching; Frequency measurement; MOS capacitors; Metal-insulator structures; P-n junctions; Semiconductor impurities;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1980.19970
Filename :
1480763
Link To Document :
