• DocumentCode
    1068719
  • Title

    Extraction of average doping density and junction depth in an ion-implanted deep-depletion transistor

  • Author

    Wu, Donald S.

  • Author_Institution
    Hewlett-Packard Laboratories, Palo Alto, CA
  • Volume
    27
  • Issue
    5
  • fYear
    1980
  • fDate
    5/1/1980 12:00:00 AM
  • Firstpage
    995
  • Lastpage
    997
  • Abstract
    A simple model for extracting the average doping density and the junction depth for an ion-implanted deep-depletion device is presented. Reasonable agreement between theory and experiment is shown.
  • Keywords
    Channel bank filters; Density measurement; Electric variables measurement; Electrons; Neodymium; Pulse measurements; Semiconductor device doping; Semiconductor process modeling; Virtual manufacturing; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1980.19971
  • Filename
    1480764
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1068719