Title :
Extraction of average doping density and junction depth in an ion-implanted deep-depletion transistor
Author_Institution :
Hewlett-Packard Laboratories, Palo Alto, CA
fDate :
5/1/1980 12:00:00 AM
Abstract :
A simple model for extracting the average doping density and the junction depth for an ion-implanted deep-depletion device is presented. Reasonable agreement between theory and experiment is shown.
Keywords :
Channel bank filters; Density measurement; Electric variables measurement; Electrons; Neodymium; Pulse measurements; Semiconductor device doping; Semiconductor process modeling; Virtual manufacturing; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.19971
