Title :
Correlated e-b and c-b junction burst noise
Author_Institution :
University of Salford, Salford, England
fDate :
5/1/1980 12:00:00 AM
Abstract :
It has been found that the total burst noise current in a bipolar transistor can be due to a single source which gives rise to contributions both from the e-b and the c-b junctions. Measurements on such a transistor show that the ratio of these contributions is inverted if the transistor is inverted. A tentative physical explanation is given for the phenomenon.
Keywords :
Circuit noise; Circuit testing; Density measurement; Doping profiles; Electron devices; Equivalent circuits; Implants; MOSFET circuits; Solid state circuits; Virtual manufacturing;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.19972
