Title :
Directly contacted GaAs IMPATT´s of high-current tunability with an etched heat sink
Author_Institution :
Technische Universität Wien, Vienna, Austria
fDate :
5/1/1980 12:00:00 AM
Abstract :
The design and some of the operating characteristics of GaAs IMPATT´s and the construction of the resonator are described. The diodes are not mounted in commonly used packages but contacted directly with metal post. Because of the absence of the usual gold wire and the package capacitance it is possible to tune the diodes with current density up to 19 GHz.
Keywords :
Capacitance; Current density; Cutoff frequency; Etching; Gallium arsenide; Gold; Heat sinks; Packaging; Schottky diodes; Wire;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.19975
