Title :
IaAsP/InGaAsP quantum-well 1.3 μm vertical-cavity surface-emitting lasers
Author :
Lao, Y.-F. ; Cao, C.-F. ; Wu, H.-Z. ; Cao, Ming ; Gong, Qiuming
Author_Institution :
Shanghai Inst. of Microsyst. & Inf. Technol., Chinese Acad. of Sci., Shanghai
Abstract :
1.3 mum vertical-cavity surface-emitting lasers based on a novel gain media consisting of InAsP/InGaAsP strain-compensated multiple quantum wells are reported. SiO2/TiO2 dielectric thin-film pairs and wafer-bonded GaAs/Al(Ga)As distributed Bragg reflectors are used as the top and bottom cavity mirrors, respectively. The device with a 5 mum-diameter selectively etched tunnel-junction aperture exhibits submilliampere threshold current as low as 0.54 mA and single-transverse mode emission. Maximum output optical power of 1.9 mW was observed in multimode lasing devices.
Keywords :
III-V semiconductors; arsenic compounds; distributed Bragg reflectors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser mirrors; quantum well lasers; semiconductor quantum wells; surface emitting lasers; InAsP-InGaAsP; cavity mirrors; current 0.54 mA; dielectric thin-film pairs; multimode lasing devices; power 1.9 mW; selectively etched tunnel-junction aperture; single-transverse mode emission; size 5 mum; strain-compensated multiple quantum wells; vertical-cavity surface-emitting lasers; wafer-bonded distributed Bragg reflectors; wavelength 1.3 mum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20093380
