DocumentCode
1068813
Title
A high-power GaAs MESFET with an experimentally optimized pattern
Author
Higashisaka, Asamitsu ; Takayama, Yoichiro ; Hasegawa, Fumio
Author_Institution
Nippon Electric Company Ltd., Kawasaki, Japan
Volume
27
Issue
6
fYear
1980
fDate
6/1/1980 12:00:00 AM
Firstpage
1025
Lastpage
1029
Abstract
A high-power GaAs MESFET with a high packing density has been developed in order to increase the total gatewidth within limited practical device size. The gate-finger width was experimentally optimized to increase the packing density without deterioration of the power gain. The developed power MESFET is the crossover structure and has a total gatewidth of 15 mm with gate-finger width of 190 µm in a 2.2-mm-wide chip. The packing density was almost doubled, and the output powers of 25 W at 6 GHz, and 17 W at 8 GHz were obtained from the internally matched four-chip devices.
Keywords
FETs; Fingers; Gallium arsenide; MESFETs; Microwave devices; Microwave frequencies; Power generation; Testing; Thermal degradation; Thermal resistance;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1980.19981
Filename
1480774
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