• DocumentCode
    1068860
  • Title

    Fast optical modulation of 10.6-µm radiation in GaAs waveguides by electrical injection

  • Author

    Seib, D.H. ; Stoll, H.M.

  • Author_Institution
    Rockwell International Corp., El Segundo, CA, USA
  • Volume
    13
  • Issue
    4
  • fYear
    1977
  • fDate
    4/1/1977 12:00:00 AM
  • Firstpage
    305
  • Lastpage
    306
  • Abstract
    A GaAs p+-n-n+ diode has been used to study modulation of guided 1.15- and 10.6-μm radiation by electrical injection of free carriers. After irradiation with high-energy electrons to reduce the electron-hole recombination time, device rise and fall times in the nanosecond region are observed.
  • Keywords
    Electron optics; Gallium arsenide; Optical attenuators; Optical modulation; Optical pumping; Optical refraction; Optical variables control; Optical waveguides; Semiconductor diodes; Substrates;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1977.1069322
  • Filename
    1069322
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1068860