DocumentCode :
106897
Title :
Characterizations of Nanosilver Joints by Rapid Sintering at Low Temperature for Power Electronic Packaging
Author :
Guan-Quan Lu ; Wanli Li ; Yunhui Mei ; Gang Chen ; Xin Li ; Xu Chen
Author_Institution :
Sch. of Mater. Sci. & Eng., Tianjin Univ., Tianjin, China
Volume :
14
Issue :
2
fYear :
2014
fDate :
Jun-14
Firstpage :
623
Lastpage :
629
Abstract :
Nanosilver paste is a promising lead-free die-attach material suitable for power electronic packaging, particularly for high-temperature applications. Compared with traditional hot pressing to sinter nanosilver, rapid sintering by a pulse current is able to sinter nanosilver in less than a second. To investigate the nanosilver sintering process during rapid sintering, we characterize the temperature field of a nanosilver joint by using an infrared camera. The temperature field is analyzed as a function of current magnitude and current-on time. The relationship between the temperature field and the shear strength of joint is discussed to optimize the rapid sintering parameters. Results show that the joint´s temperature-time curve varies with the current-on time. The shear strength can be up to 40 MPa, which is comparable to the robust hot-press sintered joint, when the peak temperature reaches above 400 °C. The microstructure of these joints is porous with a particle diameter of ~400 nm, and this aids in releasing the internal stresses resulting in higher shear strength.
Keywords :
electronics packaging; hot pressing; nanoelectronics; power electronics; silver; sintering; Ag; current magnitude; current-on time; high-temperature applications; hot pressing; infrared camera; internal stress; lead-free die-attach material; nanosilver joints; nanosilver paste; nanosilver sintering process; power electronic packaging; pulse current; rapid sintering; robust hot-press sintered joint; shear strength; temperature field; temperature-time curve; Heating; Joints; Microstructure; Resistance; Silver; Surface treatment; Temperature measurement; Nanosilver; current assisted; electronic packaging; low-temperature joining; microstructure; temperature measurement;
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2014.2306955
Filename :
6744610
Link To Document :
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