Title :
Buried selectively oxidized AlGaAs structures grown on nonplanar substrates
Author :
Ku, P.C. ; Hernandez, Jacob A. ; Chang-Hasnain, C.J.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA
Abstract :
We demonstrate a novel buried oxide-grating structure formed by selectively oxidized Al/sub x/Ga/sub 1-x/As grown on nonplanar substrates using low-pressure metal-organic chemical vapor deposition (MOCVD) for the first time. Localized aluminum content variation in AlGaAs is obtained with MOCVD growth on nonplanar substrate. Buried aluminum oxide/semiconductor-distributed-feedback structure is achieved with selective oxidation of these AlGaAs layers. We fabricated a resonant-cavity-enhanced photodetector with the imbedded buried-oxide structure and measured the photodetector responsivity spectrum.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; diffraction gratings; gallium arsenide; integrated optics; optical resonators; oxidation; photodetectors; AlGaAs; AlGaAs layers; MOCVD; MOCVD growth; buried oxide-grating structure; buried selectively oxidized AlGaAs structures; imbedded buried-oxide structure; localized aluminum content; low-pressure metal-organic chemical vapor deposition; nonplanar substrates; photodetector responsivity spectrum; resonant-cavity-enhanced photodetector; selective oxidation; selectively oxidized; semiconductor-distributed-feedback structure; Aluminum oxide; Chemical vapor deposition; Distributed feedback devices; Gratings; III-V semiconductor materials; MOCVD; Oxidation; Photodetectors; Resonance; Substrates;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2002.805848
