Title :
Development of GaAs monolithic power amplifiers in X-band
Author :
Sokolov, Vladimir ; Williams, Ralph E.
Author_Institution :
Texas Instruments Incorporated, Dallas, TX
fDate :
6/1/1980 12:00:00 AM
Abstract :
The design, fabrication, and performance of several GaAs FET monolithic circuits are described. These include a two-stage, four-FET push-pull amplifier that has exhibited 1.4-W output power with 12.4-dB gain at 9.0 GHz, and a three-transistor monolithic paraphase amplifier (unbalanced input, balanced output) exhibiting 6-dB small-signal gain and a 1-dB gain compression point of 20 dBm. The amplifier chips utilize monolithically fabricated inductors, capacitors, and transmission lines to accomplish on-the-chip impedance matching.
Keywords :
Capacitors; Circuits; FETs; Fabrication; Gallium arsenide; Impedance matching; Inductors; Power amplifiers; Power generation; Power transmission lines;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.20001
