DocumentCode :
1069032
Title :
GaAs and related heterojunction charge-coupled devices
Author :
Deyhimy, Ira ; Eden, Richard C. ; Harris, James S., Jr.
Author_Institution :
Rockwell International Electronics Research Center, Thousand Oaks, CA, USA
Volume :
27
Issue :
6
fYear :
1980
fDate :
6/1/1980 12:00:00 AM
Firstpage :
1172
Lastpage :
1180
Abstract :
A Schottky-barrier gate GaAs charge-coupled device (CCD) technology is described. Experimental devices fabricated in this technology have operated with charge transfer efficiency >0.999/transfer and-have operated at clock frequency 
MHz. Implications of this technology in high-speed signal processing and in visible and near-infrared imaging are discussed.
MHz. Implications of this technology in high-speed signal processing and in visible and near-infrared imaging are discussed.Keywords :
Charge coupled devices; Clocks; Electron mobility; Gallium arsenide; Heterojunctions; Infrared imaging; Optical imaging; Photonic band gap; Signal processing; Silicon;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1980.20002
Filename :
1480795
Link To Document :
