DocumentCode
1069071
Title
Equivalent circuit model of FET including distributed gate effects
Author
Kuvås, Reidar L.
Author_Institution
NTNF, Oslo, Norway
Volume
27
Issue
6
fYear
1980
fDate
6/1/1980 12:00:00 AM
Firstpage
1193
Lastpage
1195
Abstract
A model is presented which takes into account the distributed nature of the gate in microwave field-effect transistors (FET´s). The model is used to derive an expression for the equivalent gate impedance. The result is suitable for determining the reduction in the available gain tlue to gate losses.
Keywords
Degradation; Electrodes; Equivalent circuits; Gallium arsenide; Geometry; Helium; Impedance; Microwave FETs; Partial differential equations; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1980.20006
Filename
1480799
Link To Document