DocumentCode
1069075
Title
Direct Modulation Properties of 1.55- μm InGaAsP/InP Microring Lasers
Author
Mikroulis, Spiros ; Roditi, Eugenia ; Syvridis, Dimitris
Author_Institution
Athens Univ., Athens
Volume
26
Issue
2
fYear
2008
Firstpage
251
Lastpage
256
Abstract
The modulation properties of 1.55-mum InGaAsP/InP microring lasers are investigated using a multimode rate equation model. A detailed study, with respect to Q-factor and extinction ratio calculations, is carried out as a function of different microring´s key design and operating parameters. The modulator´s performance study shows the possibility for a successful operation at a bit rate of 2.4 Gb/s for radii between 30 and 50 mum and proper values for the bus waveguide reflectivity.
Keywords
III-V semiconductors; Q-factor; gallium arsenide; gallium compounds; indium compounds; micro-optics; optical modulation; semiconductor lasers; InGaAsP-InP; Q-factor; bit rate 2.4 Gbit/s; bus waveguide reflectivity; direct modulation properties; extinction ratio; microring lasers; multimode rate equation model; size 1.55 mum; size 30 mum to 50 mum; Equations; Extinction ratio; Gain; Indium phosphide; Laser modes; Laser noise; Laser theory; Reflectivity; Ring lasers; Waveguide lasers; Direct modulations; microring laser;
fLanguage
English
Journal_Title
Lightwave Technology, Journal of
Publisher
ieee
ISSN
0733-8724
Type
jour
DOI
10.1109/JLT.2007.909907
Filename
4451233
Link To Document