Title :
Interaction of microwave biased n-GaAs and 337 µm radiation
Author :
Epton, Paul J. ; Wilson, William L., Jr. ; Tittel, Frank K.
Author_Institution :
Rice University, Houston, TX
fDate :
6/1/1977 12:00:00 AM
Abstract :
n-GaAs cooled to 4.2 K is impact ionized with X-band microwave pulses. Fast rise-time modulation of 337 μm radiation is observed. The GaAs is less absorptive in the ionized state than in the unionized state.
Keywords :
Absorption; Amplitude modulation; Bandwidth; Electrons; Gallium arsenide; Helium; Impact ionization; Ionizing radiation; Microwave devices; Pulse modulation;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1977.1069349
