DocumentCode :
1069463
Title :
Dependence of longitudinal mode structure on injected carrier diffusion in diode lasers
Author :
Streifer, William ; Burnham, Robert D. ; Scifres, Don R.
Author_Institution :
Xerox Palo Alto Research Center, Palo Alto, CA
Volume :
13
Issue :
6
fYear :
1977
fDate :
6/1/1977 12:00:00 AM
Firstpage :
403
Lastpage :
404
Abstract :
We hypothesize that the longitudinal mode structure of diode lasers is greatly influenced by the axial diffusion of injected carriers. Thus several longitudinal modes can coexist in lasers which utilize both injected electrons and slowly diffusing injected holes, whereas lasers which only use injected electrons should operate in a single longitudinal mode.
Keywords :
Bandwidth; Charge carrier processes; Diode lasers; Electrons; Gallium arsenide; Laser modes; Laser theory; Neodymium; Optical scattering; Particle scattering;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1977.1069376
Filename :
1069376
Link To Document :
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