DocumentCode :
1069675
Title :
Computer analysis of a short-channel BC MOSFET
Author :
Oka, Hideki ; Nishiuchi, Koichi ; Nakamura, Tetsuo ; Ishikawa, Hajime
Author_Institution :
Fujitsu Laboratories, Ltd., Kawaski, Japan
Volume :
27
Issue :
8
fYear :
1980
fDate :
8/1/1980 12:00:00 AM
Firstpage :
1514
Lastpage :
1520
Abstract :
This paper describes the results of a two-dimensional numerical analysis of a normally-off-type buried-channel MOSFET (BC MOSFET). This device has two operation modes whose boundary is a flat-band voltage. Bulk current is a main current when 
. Short-channel effects, like the decrease of a threshold voltage, were examined. Devices with a thinner gate oxide, a shallower channel depth, and a higher substrate concentration are effective for the short-channel effect.
. Short-channel effects, like the decrease of a threshold voltage, were examined. Devices with a thinner gate oxide, a shallower channel depth, and a higher substrate concentration are effective for the short-channel effect.Keywords :
Current density; Electrodes; Electron mobility; Electrooptic effects; Impurities; MOSFET circuits; Numerical analysis; Permittivity; Threshold voltage; Virtual manufacturing;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1980.20065
Filename :
1480858
Link To Document :
