• DocumentCode
    1069682
  • Title

    An improved liquid-phase-epitaxial growth method for GaAs-(Ga, Al)As double heterostructures

  • Author

    Akita, K. ; Nishitani, Y. ; Nakajima, K. ; Yamaguchi, A. ; Kusunoki, T. ; Kotani, T. ; Imai, H. ; Takusagawa, M. ; Ryuzan, O.

  • Author_Institution
    Fujitsu Laboratories, Ltd., Kawasaki, Japan
  • Volume
    13
  • Issue
    8
  • fYear
    1977
  • fDate
    8/1/1977 12:00:00 AM
  • Firstpage
    585
  • Lastpage
    587
  • Abstract
    A new growth method of GaAs-(Ga, Al)As multilayer, in which the solid surface is always covered by a melt during the growth of multilayer, is proposed, and laser characteristics of wafers grown by this method are presented.
  • Keywords
    Artificial intelligence; Boats; Containers; Nonhomogeneous media; Oxidation; Pistons; Rails; Solids; Surface contamination; Surface emitting lasers;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1977.1069395
  • Filename
    1069395
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1069682