Near-infrared In1-xGaxP1-zAszdouble-heterojunction lasers: Constant-temperature LPE growth and operation in an external-grating cavity

Author

Wright, P.D. ; Rezek, E.A. ; Ludowise, M.J. ; Holonyak, N., Jr.

Author_Institution

University of Illinois at Urbana-Champaign, Urbana, Ill.

Volume

13

Issue

8

fYear

1977

fDate

8/1/1977 12:00:00 AM

Firstpage

637

Lastpage

642

Abstract

InP-In1-xGaxP1-zAsz-InP ( $x \\sim 0.08, z \\sim 0.17$ ) double-heterojuncfion (DH) lasers emitting at $\\lambda \\sim 1.0 \\mu$ m (77 K) have been fabricated by constant-temperature liquid-phase epitaxy (LPE). The crystal-growth process is described and compared to previous work on visible spectrum ( $\\lambda \\sim 6000$ -Å) In1-xGaxP1-zAszdouble-heterojunction lasers. Emission spectra are presented for the near-infrared quaternary DH lasers. In particular, the observation of cavity oscillations in the low-level spontaneous-emission spectra allows the determination of the index dispersion quantity over a wide wavelength range. Finally, these In1-xGaxP1-zAszDH lasers are operated in an external-grating cavity. Such operation permits tunable, narrow-linewidth laser emission and provides information concerning radiative-recombination processes. Comparisons are made to earlier work on external-grating operation of visible-spectrum ( $\\lambda \\sim 6000$ -Å) In1-xGaxP1-zAszDH lasers.

Keywords

DH-HEMTs; Epitaxial growth; Gratings; Heterojunctions; Indium phosphide; Infrared heating; Laser theory; Laser tuning; Thermal conductivity; Tunable circuits and devices;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.1977.1069397

Filename

1069397