DocumentCode :
1069788
Title :
New phenomena on misfit dislocations in a GaAlAsP-GaAs heterojunction under light irradiation
Author :
Fujiwara, Takao ; Takagi, Nobuyuki ; Imai, Hajime ; Komiya, Satoshi ; Takusagawa, Masahito ; Takanashi, Hirobumi ; Misugi, Takahiko
Author_Institution :
Fujisu Laboratories, Ltd., Kawasaki, Japan
Volume :
13
Issue :
8
fYear :
1977
fDate :
8/1/1977 12:00:00 AM
Firstpage :
616
Lastpage :
619
Abstract :
A Ga0.92 Al0.08 As-Ga0.7 Al0.3 As0.991 P0.009 T-Q double-heterostructure (DH) laser has been operating for over 7000 hours at 70°C. Its optical power from one facet is 4 mW. The degraded T-Q DH laser has been studied by photoluminescence (PL) topography. Dark-line defects in the 
and 
directions have been observed in the active layer of the degraded laser. The dark-line defects in the direction originate from the dark-line defects in the direction. The dark-line defects in the direction are attributable to the misfit dislocations introduced during liquid-phase-epitaxial (LPE) growth. The misfit dislocations are found, by PL topography, to be formed at the interface between the GaAs buffer layer and the quaternary-clad layer. These results indicate that the misfit dislocation in the direction moves to the active layer from the interface between the GaAS buffer layer and the quaternary-clad layer during laser operation. Degradation of the T-Q DH laser is associated with the light-induced motion of the misfit dislocation. Light-induced motion of the misfit dislocation has been also observed in the T-Q DH wafer.
and directions have been observed in the active layer of the degraded laser. The dark-line defects in the direction originate from the dark-line defects in the direction. The dark-line defects in the direction are attributable to the misfit dislocations introduced during liquid-phase-epitaxial (LPE) growth. The misfit dislocations are found, by PL topography, to be formed at the interface between the GaAs buffer layer and the quaternary-clad layer. These results indicate that the misfit dislocation in the direction moves to the active layer from the interface between the GaAS buffer layer and the quaternary-clad layer during laser operation. Degradation of the T-Q DH laser is associated with the light-induced motion of the misfit dislocation. Light-induced motion of the misfit dislocation has been also observed in the T-Q DH wafer.Keywords :
Buffer layers; DH-HEMTs; Degradation; Gallium arsenide; Heterojunctions; Lattices; Optical buffering; Optical filters; Surfaces; Temperature;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1977.1069405
Filename :
1069405
Link To Document :
