Influence of Channel Stoichiometry on Zinc Indium Oxide Thin-Film Transistor Performance

Author

McDowell, Matthew G. ; Hill, Ian G.

Author_Institution

Dept. of Phys., Dalhousie Univ., Halifax, NS

Volume

56

Issue

2

fYear

2009

Firstpage

343

Lastpage

347

Abstract

Thin-film transistors using a semiconductor of the form (ZnO)x( In2O3)1- x were fabricated via combinatorial RF sputtering. Stoichiometries varied from x=0.5 to x=1. Two sets of devices were annealed under oxygen at 300degC and 600degC, with another left as deposited. Devices fabricated with a zinc oxide fraction of 0.67plusmn0.02 were found to exhibit the highest mobilities of 35 cm2/Vmiddots for 300degC annealing conditions. Peak performance was found for x=0.75plusmn0.02, which yielded near-zero turn-on voltages, inverse subthreshold slopes of 0.3 V/dec, and on/off ratios up to 109.

Keywords

II-VI semiconductors; annealing; indium compounds; semiconductor thin films; sputter deposition; stoichiometry; thin film transistors; wide band gap semiconductors; zinc compounds; ZnOIn₂O₃; annealing; channel stoichiometry; combinatorial RF sputtering; inverse subthreshold slopes; mobilities; on-off ratio; semiconductor; temperature 300 degC; temperature 600 degC; thin film transistor; turn-on voltages; Annealing; Fabrication; Gallium compounds; Indium; Radio frequency; Silicon; Sputtering; Substrates; Thin film transistors; Zinc oxide; Amorphous oxide semiconductors; RF magnetron sputtering; combinatorial sputtering; thin film transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2008.2011679

Filename

4752739