Title :
Embedded-stripe GaAs-GaAlAs double-heterostructure lasers with polycrystalline GaAsP layers - I: Lasers with cleaved mirrors
Author :
Itoh, Kunio ; Asahi, Kunihiko ; Inoue, Morio ; Teramoto, Iwao
Author_Institution :
Matsushita Electronics Corporation, Takatsuki, Osaka, Japan
fDate :
8/1/1977 12:00:00 AM
Abstract :
We report a new type of embedded stripe laser in which low-order mode CW oscillation is successfully attained at room temperature. In order to achieve lateral current confinement, a high-resistivity polycrystalline GaAsP layer is formed around the mesa stripe by selective vapor-phase growth technology. It turns out that a stable single-mode operation is attained at an injected current up to several times the threshold value.
Keywords :
Carrier confinement; Conductivity; Geometrical optics; Laser modes; Laser stability; Mirrors; Optical device fabrication; Optical materials; Refractive index; Semiconductor lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1977.1069408
