DocumentCode :
1069876
Title :
A theory on long time delays and internal Q switching in GaAs junction lasers
Author :
Nunes, F.D. ; Patel, N.B. ; Ripper, Jose E.
Author_Institution :
Universidade Estadual de Campinas, Campinas, Brazil
Volume :
13
Issue :
8
fYear :
1977
fDate :
8/1/1977 12:00:00 AM
Firstpage :
675
Lastpage :
681
Abstract :
In this paper we present a theory that explains long time delays and internal 
switching in GaAs junction lasers, using only processes known to occur in these lasers: perturbation of refractive index of the active region by injected carriers, joule heating, and gain guiding.
switching in GaAs junction lasers, using only processes known to occur in these lasers: perturbation of refractive index of the active region by injected carriers, joule heating, and gain guiding.Keywords :
Current density; Delay effects; Equations; Gallium arsenide; Heating; Laser theory; Optical pulses; Propagation losses; Refractive index; Stimulated emission;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1977.1069413
Filename :
1069413
Link To Document :
