Computer simulation of annihilation process of vertical Bloch line pair

The annihilation process of vertical Bloch line (VBL) pair caused by the injection of a Bloch point (BP), one of the processes proposed for VBL write function in the VBL memory, is investigated by micromagnetic calculation in three dimensions. The BP, which is nucleated on the film-top surface (near the write conductor) at the center of the VBL pair, is observed to move down inside the film while annihilating the VBL pair. When the current in the write conductor is large, the BP appears not only on the film-top surface, but also within the film and on the film bottom surface