Computer simulation of annihilation process of vertical Bloch line pair

Author

Nakatani, Y. ; Hayashi, N.

Author_Institution

Dept. of Comput. Sci., Univ. of Electro-Commun., Tokyo, Japan

Volume

29

Issue

6

fYear

1993

fDate

11/1/1993 12:00:00 AM

Firstpage

2587

Lastpage

2589

Abstract

The annihilation process of vertical Bloch line (VBL) pair caused by the injection of a Bloch point (BP), one of the processes proposed for VBL write function in the VBL memory, is investigated by micromagnetic calculation in three dimensions. The BP, which is nucleated on the film-top surface (near the write conductor) at the center of the VBL pair, is observed to move down inside the film while annihilating the VBL pair. When the current in the write conductor is large, the BP appears not only on the film-top surface, but also within the film and on the film bottom surface

Keywords

Bloch line memories; digital simulation; magnetic domain walls; magnetic thin films; physics computing; Bloch point; annihilation process; film bottom surface; film-top surface; micromagnetic calculation; vertical Bloch line memory; vertical Bloch line pair; vertical Bloch line write function; write conductor; Computer science; Computer simulation; Conductive films; Conductors; Demagnetization; Equations; Magnetic domain walls; Magnetic films; Magnetization; Micromagnetics;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.280855

Filename

280855