DocumentCode :
1070161
Title :
A content addressable memory for use in CEBAF´s CLAS detector level 2 triggering system
Author :
Hodson, R.F. ; Doughty, D.C., Jr. ; Allgood, D.C. ; Campbell, S.A. ; Wilson, W.C. ; Bickley, M.H.
Author_Institution :
Christopher Newport Univ., Newport News, VA, USA
Volume :
43
Issue :
3
fYear :
1996
fDate :
6/1/1996 12:00:00 AM
Firstpage :
1675
Lastpage :
1679
Abstract :
A collaboration of researchers from CEBAF, CNU and NASA is designing a 256×32 specialized Content Addressable Memory (CAM) for the level 2 triggering system in CEBAF´s CLAS detector. These integrated circuits will find tracks and the momentum and angle of each track within 2 microseconds of an event. The custom CAM can operate as conventional memory, performing read and write operations, and can additionally perform independent byte compare operations across all words simultaneously. It is this compare feature which makes these CAMs attractive for identifying tracks passing through drift chambers by linking together segment number triplets within the CAM. Simulations have indicated that less than 16 k triplets need to be stored for each sector of the detector. This implies the level 2 triggering can be performed with 64 CAM chips per sector, or 384 total. Each data channel into a sector CAM array is buffered in a FIFO and is designed to handle aggregate data rates up to 750 Mbs for three channels (one channel/superlayer). The architecture of the level 2 trigger and details of the CAM chip design are discussed along with a performance report on our prototype CAMs
Keywords :
CMOS memory circuits; content-addressable storage; detector circuits; drift chambers; high energy physics instrumentation computing; nuclear electronics; CEBAF CLAS detector level two triggering system; FIFO; content addressable memory; drift chambers; independent byte compare operations; integrated circuits; Aggregates; Associative memory; CADCAM; Chip scale packaging; Collaboration; Computer aided manufacturing; Detectors; Joining processes; NASA; Read-write memory;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.507169
Filename :
507169
Link To Document :
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