Title :
Depletion-layer calculations of a double-diffused junction
Author_Institution :
University of Maryland, College Park, MD
fDate :
9/1/1980 12:00:00 AM
Abstract :
The depletion-layer width of a double-diffused or implanted-diffused junction has been calculated for the case of a Gaussian/Gaussian profile. Closed-form solutions of the potential difference between the two edges of the depletion layer are obtained by integrating the Poisson´s equation and equating the positive and negative charges in the depletion layer.
Keywords :
Bipolar integrated circuits; Bipolar transistors; Boundary conditions; Capacitance; Closed-form solution; Gaussian distribution; Ion implantation; Poisson equations; Semiconductor devices; Semiconductor impurities;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.20113
